Encapsulation of locally welded silver nanowire with water-free ALD-SbO<sub><i>x</i></sub> for flexible thin-film transistors
نویسندگان
چکیده
Transparent conductive electrodes are essential in the application of flexible electronics. In this work, we successfully demonstrated a novel strategy for improving mechanical/electrical properties indium tin oxide (ITO)-free silver nanowire (Ag NW) thin films. To reduce contact resistance Ag NWs, an ethanol-mist was used to weld cross junction wires at room temperature. The nano-welded NWs (W-Ag NWs) were then coated with aluminum-doped ZnO (AZO) solution, which significantly roughness NW film. Finally, ultrathin SbO x film 2 nm deposited on surface using water-free low-temperature atomic layer deposition technique protect W-Ag NW/AZO from water or oxygen degradation. treated have high transmittance 87% and low sheet about 15 Ω/sq, is comparable ITO electrode's property. After 1000 cycles bending testing, NW/AZO/SbO practically retains its initial conductivity. Furthermore, samples immersed solution pH values ranging 3 13 5 min. When compared untreated those AlO films, had superior electrical stability. integrated as gate electrode low-power operating Ti-ZnO transistors (TFTs). 5% TFT has field-effect mobility 19.7 cm V s −1 , I / off ratio 10 7 subthreshold swing 147 mV decade .
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0118500